BSP75NNT Infineon Technologies, BSP75NNT Datasheet
BSP75NNT
Specifications of BSP75NNT
Related parts for BSP75NNT
BSP75NNT Summary of contents
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... Overvoltage protection • Current limitation Application • All kinds of resistive, inductive and capacitive loads in switching applications • µ C compatible power switch for 12 V and applications and for 42 Volt Powernet • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions ...
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HITFET Logic dV/dt IN limitation Over temperature Protection ESD Figure 1 Block Diagram Figure 2 Pin Configuration Pin Definitions and Functions Pin No. Symbol Function 1 IN Input; activates output and supplies internal logic 2 DRAIN Output to the load ...
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... Circuit Description The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a logic level input, an open drain DMOS output stage and integrated protection functions designed for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial applications. Protection Functions • ...
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Absolute Maximum Ratings = 25 ° C, unless otherwise specified T j Parameter Continuous drain source voltage Drain source voltage for short circuit protection Continuous input voltage Peak input voltage Continuous Input Current -0.2V ≤ ≤ 10V ...
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Electrical Characteristics = 25 ° C, unless otherwise specified T j Parameter Static Characteristics Drain source clamp voltage Off state drain current Input threshold voltage Input current normal operation, < D D(lim) I current limitation mode ...
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Electrical Characteristics (cont’ ° C, unless otherwise specified T j Parameter Slew rate 50% Slew rate off 50 to 70% 2) Protection Functions Thermal overload trip temperature Thermal hysteresis Unclamped single pulse inductive T energy ...
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EMC-Characteristics The following EMC-Characteristics outline the behavior of typical devices. They are not part of any production test. Table 1 Test Conditions Parameter Temperature Supply Voltage Load Operation mode DUT specific Fast electrical transients acc. to ISO 7637 Max. 1) ...
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PULSE V BB BSP75N IN DRAIN SOURCE Figure 3 Test circuit for ISO pulse Conducted Emissions Acc. IEC 61967-4 (1 Ω /150 Ω method) Typ. V Emissions at PWM-mode with bb 150 Ω -matching network 100 ...
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Block diagram HITFET DRAIN SOURCE V IN Figure 5 Terms IN SOURCE Figure 6 Input Circuit (ESD protection) ESD zener diodes are not designed for DC current. LOAD Drain V AZ Power Source DMOS Figure 7 Inductive ...
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... Timing diagrams 0.9 Figure 9 Switching a Resistive Load DS(AZ Figure 10 Switching an Inducitve Load Data Sheet V1 D(lim ϑ ϑ ϑ ϑ j 0.1 Figure 11 t off â HITFET BSP 75N t t thermal hysteresis t Short circuit 2003-01-10 ...
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Max. allowable power dissipation tot Amb On-state resistance ...
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Typ. on-state resistance = 25 ° 0 Ω ...
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Package Outlines P-SOT223-4 (Small Outline Transistor 0.7 ±0.1 0.25 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” SMD = Surface Mounted Device Data Sheet V1.0 6.5 ±0.2 3 ...
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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are in-tended to be implanted in the human body support and/ or maintain and sustain and/or protect human life ...