BAR81WH6327XT Infineon Technologies, BAR81WH6327XT Datasheet
BAR81WH6327XT
Manufacturer Part Number
BAR81WH6327XT
Description
Manufacturer
Infineon Technologies
Type
Switchr
Datasheet
1.BAR81WH6327XT.pdf
(4 pages)
Specifications of BAR81WH6327XT
Forward Current
100mA
Forward Voltage
1V
Operating Temperature Classification
Military
Reverse Voltage
30V
Mounting
Surface Mount
Maximum Series Resistance @ Maximum If
1@5mAOhm
Operating Temperature (max)
125C
Lead Free Status / RoHS Status
Compliant
Silicon RF Switching Diode
Type
BAR81W
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
thJA
please refer to Application Note Thermal Resistance
Marking
BBs
1)
S
= 138 °C
1 = A
Pin Configuration
2 = C
1
Symbol
V
I
P
T
T
T
R
F
j
op
stg
R
tot
thJS
3 = A
4
4 = C
-55 ... 125
-55 ... 150
Value
3
100
100
150
30
120
Package
SOT343
1
Jul-06-2001
BAR81W
VPS05605
2
Unit
V
mA
mW
°C
°C
K/W
Related parts for BAR81WH6327XT
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
RF switching diode for use in shunt configuration
Manufacturer:
Infineon Technologies
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
16-bit microcontroller with 2x2 KByte RAM
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
NPN silicon RF transistor
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
Si-MMIC-amplifier in SIEGET 25-technologie
Manufacturer:
Infineon Technologies AG
Datasheet:
Part Number:
Description:
IGBT Power Module
Manufacturer:
Infineon Technologies AG
Datasheet:
BAR81WH6327XT Summary of contents
Page 1
Silicon RF Switching Diode Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss Type Marking BAR81W BBs Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature ...
Page 2
Electrical Characteristics at T Parameter Characteristics Reverse current Forward voltage I = 100 characteristics Diode capacitance MHz ...
Page 3
Forward current 120 mA 100 Permissible Pulse Load K 0.5 0 ...
Page 4
Forward current 25° 400 500 600 700 Diode capacitance 1MHz 1 pF 0.8 ...