BAR81WE6327XT Infineon Technologies, BAR81WE6327XT Datasheet
BAR81WE6327XT
Specifications of BAR81WE6327XT
Related parts for BAR81WE6327XT
BAR81WE6327XT Summary of contents
Page 1
Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR81W ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Reverse current Forward voltage I = 100 Characteristics Diode capacitance MHz ...
Page 3
Diode capacitance Parameter 1 pF 0.8 0.7 0.6 1 Mhz ... 1.8 GHz 0.5 0.4 0.3 0 Forward resistance 100MHz 1 10 ...
Page 4
Forward current BAR81W 120 mA 100 Permissible Pulse Load BAR81W Fmax FDC p ...
Page 5
Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...
Page 6
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...