BAR81W Infineon Technologies, BAR81W Datasheet
Home Sensors, Transducers Optical - Reflective - Transistor, PIN Photodiode, Analog Output BAR81W
Manufacturer Part Number
BAR81W
Description
DIODE, RF, PIN, SOT-343
Manufacturer
Infineon Technologies
Forward Current
100mA
Forward Voltage
1V
Operating Temperature Classification
Military
Reverse Voltage
30V
Mounting
Surface Mount
Maximum Series Resistance @ Maximum If
1@5mAOhm
Operating Temperature (max)
125C
Capacitance Ct
0.6pF
Forward Current If(av)
100mA
No. Of Pins
4
Operating Temperature Range
-55°C To +125°C
Reverse Voltage Vr Max
30V
Termination Type
SMD
Diode
RoHS Compliant
Diode Type
RF
Package / Case
SOT-343
Diode Case Style
SOT-343
Rohs Compliant
Yes
Packages
SOT343
If (max)
100.0 mA
Ct (max)
1.0 pF
Rf (typ)
0.7 Ohm
Trr (typ)
80.0 ns
Configuration
Single
Lead Free Status / RoHS Status
Compliant
Available stocks
Manufacturer:
INFINEON/英飞凌
Part Number:
BAR81W E6327
Manufacturer:
INFINEON/英飞凌
Silicon RF Switching Diode
BAR81W
Type
BAR81W
* series inductance chip to ground
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
s
Designed for use in shunt configuration in
High shunt signal isolation
Low shunt insertion loss
Optimized for short - open transformation
high performance RF switches
using
138°C
lines
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
Package
SOT343
Configuration
single shunt-diode
1
Symbol
V
I
P
T
T
T
Symbol
R
F
j
op
stg
R
tot
thJS
-55 ... 125
-55 ... 150
Value
Value
100
100
150
30
120
L
0.15*
S
(nH)
Dec-20-2002
Marking
BBs
BAR81...
Unit
V
mA
mW
°C
Unit
K/W
Related parts for BAR81W
BAR81W Summary of contents
... RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines BAR81W Type BAR81W * series inductance chip to ground Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Forward current Total power dissipation T 138°C s ...
Electrical Characteristics at T Parameter DC Characteristics Reverse current Forward voltage I = 100 Characteristics Diode capacitance MHz ...
Diode capacitance Parameter 1 F 0.8 0.7 0.6 0.5 1 MHz ... 1.8 GHz 0.4 0.3 0 Forward resistance 100MHz 1 ...
... Forward current BAR81W 120 mA 100 Permissible Pulse Load BAR81W Fmax FDC 0.005 0.01 0.02 0. 0.1 0.2 0 Permissible Puls Load R BAR81W 10 K 105 120 °C 150 BAR81... = thJS 3 2 0.5 0.2 1 0.1 0.05 0.02 0.01 0.005 Dec-20-2002 ( ...
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...
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