BAR9502LSE6327XT Infineon Technologies, BAR9502LSE6327XT Datasheet

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Silicon PIN Diode • Designed for antenna switch modules (ASM) in battery-powered mobile systems • Low capacitance at zero volts reverse bias at frequencies above 1 GHz (typ. 0.24 pF) • Low forward resistance (typ. 1.2 Ω • ...

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Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage 100 25°C, unless otherwise specified A Symbol ...

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Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...

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Diode capacitance C = ƒ Parameter 0.5 pF 0.4 1 MHz 100 MHz 0.35 1 GHz 1.8 GHz 0.3 0.25 0.2 0.15 0 Forward resistance r = ƒ ...

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Forward current I = ƒ 120 mA 100 Permissible Pulse Load ƒ Fmax FDC p ...

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Package Outline Top view 2 1 Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" Copper Marking Layout Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Package TSSLP-2-1 +0.01 ...

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the expr approval of Infineon Technologies failure of such components can reasonably be expected to cau of that life-support device or system affect the safety or effectiveness of that device or system. L devices or systems are intended to be implanted in the human body support and/or maintain and and/or protect human life ...