BSM600GA120DLCS Infineon Technologies, BSM600GA120DLCS Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
BSM600GA120DLCS
Manufacturer Part Number
BSM600GA120DLCS
Description
IGBT Modules N-CH 1.2KV 900A
Manufacturer
Infineon Technologies
Datasheet
1.BSM600GA120DLCS.pdf
(8 pages)
Specifications of BSM600GA120DLCS
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Configuration
Single Dual Collector Dual Emitter
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
900 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
600.0 A
Vce(sat) (typ)
2.1 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM600GA120DLCS
Manufacturer:
MITSUBISHI
Quantity:
1 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
;
2
2-
;
@
5h
2
%
:
5
c
R #
A
#
<
&
&
A
<T&
&
G
%
&
%
&
&
#
#
G
<
&
A
<
&
<
A
4 `
4
&
A
;
&
&
&
BSM600GA120DLCS
&
#
'() * +,-
.> *
5g *
5g *
5g *
.> *
.C0 * "+ .
5g *
.> *
.C0 * "+ .
5g *
.> *
.C0 * "+ .
d=IHBP * "
= * "
2
2
.4 = * "
:4 .C0 *
:4 .C0 *
:4
:4
:4
.
.
.
E
!"
EU _ W E
gE
gE
gE
*
*
*
.
.
4 '() * " +,-
deSPIHP * "
2
:EL
:EL
:EL
EU _ W
'() * +,-
'() * " +,-
'() * +,-
'() * " +,-
'() * +,-
'() * " +,-
'() * +,-
'() * " +,-
.>>?
5g>?
$SPi
5>?
.g
KS
BJ/f
5h
BJb/
5g
!
"
"
"43
"4
+34
+ 4
+
"
4
4
!
3
4
4
4 +
F!
:h
L-
L-
.
:
:
.
.
:
:
E
E
[
[