BSM150GB170DLC Infineon Technologies, BSM150GB170DLC Datasheet - Page 7

• Manufacturer Part Number: BSM150GB170DLC
• Description: IGBT Modules 1700V 150A DUAL
• Manufacturer: Infineon Technologies

Specifications of BSM150GB170DLC

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 300A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 300 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1.25 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 150.0 A
• Vce(sat) (typ): 2.6 V
• Technology: IGBT2 Low Loss
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
350
300
250
200
150
100
0,001
50
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
Transienter Wärmewiderstand
Transient thermal impedance
r
r
0
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
IC,Modul
IC,Chip
BSM 150 GB 170 DLC
400
600
0,0047
0,0062
11,16
44,67
1
0,1
800
V
7(8)
CE
[V]
0,0356
0,0473
32,28
88,51
1000
2
t [sec]
Z
1
thJC
1200
= f (t)
R
g
= 10 Ohm, T
0,0613
0,0473
Zth:Diode
Zth:IGBT
48,09
88,51
3
1400
10
vj
= 125°C
1600
0,4669
0,2322
18,32
8,47
4
1800
100
BSM150GB170DLC