BSM150GB170DLC Infineon Technologies, BSM150GB170DLC Datasheet - Page 7
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BSM150GB170DLC
Manufacturer Part Number
BSM150GB170DLC
Description
IGBT Modules 1700V 150A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM150GB170DLC.pdf
(9 pages)
Specifications of BSM150GB170DLC
Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
300A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
300 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
1.25 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
150.0 A
Vce(sat) (typ)
2.6 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSM150GB170DLC
Manufacturer:
INFINEON
Quantity:
219
Part Number:
BSM150GB170DLC
Quantity:
50
IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
1
350
300
250
200
150
100
0,001
50
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
Transienter Wärmewiderstand
Transient thermal impedance
r
r
0
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
IC,Modul
IC,Chip
BSM 150 GB 170 DLC
400
600
0,0047
0,0062
11,16
44,67
1
0,1
800
V
7(8)
CE
[V]
0,0356
0,0473
32,28
88,51
1000
2
t [sec]
Z
1
thJC
1200
= f (t)
R
g
= 10 Ohm, T
0,0613
0,0473
Zth:Diode
Zth:IGBT
48,09
88,51
3
1400
10
vj
= 125°C
1600
0,4669
0,2322
18,32
8,47
4
1800
100
BSM150GB170DLC