FF150R12KT3G Infineon Technologies, FF150R12KT3G Datasheet - Page 2

• Manufacturer Part Number: FF150R12KT3G
• Description: IGBT Modules N-CH 1.2KV 225A
• Manufacturer: Infineon Technologies

Specifications of FF150R12KT3G

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 225 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM
• Ic (max): 150.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3 Fast
• Housing: 62 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
9
1
1,
9
>
4g
1
$
8
4
b
R "
?
"
:
%
%
?
:T%
%
E
$
%
$
%
%
"
"
E
:
%
?
:
%
:
?
3 _
3
%
?
9
%
%
%
%
"
FF150R12KT3G
&'( ) *+,
-< )
4f ) * 83 -A/ )
4f ) * 83 -A/ )
4f ) * 83
-< ) H
-A/ )
4f ) * 83
-< ) H
-A/ )
4f ) * 83
-< ) H
-A/ )
c;GF@P )
; )
1
1
-3 ; )
* -
* -
* -
-
-
-
!
C
CU ^ W C
fC
fC
fC
)
)
)
-
-
3 &'( )
cdSPGFP )
2
8CL U&'()
8CL U&'()
8CL U&'()
*+,
CU ^ W
*+,W
*+,W
*+,W
&'( ) *+,
&'( )
&'( ) *+,
&'( )
&'( ) *+,
&'( )
&'( ) *+,
&'( )
*+,
*+,
*+,
*+,
-<<=
4f<=
#SPh
4<=
-f
JS
@I.e
4g
@Ia.
4f
!
KH
3H*
3H*
*3
23
3
3 H
*
3
*
*
!
3 *
3
D!
8g
L,
L,
-
8
8
-
-
8
8
C
C
[
[