BSM200GB170DL Infineon Technologies, BSM200GB170DL Datasheet - Page 3

• Manufacturer Part Number: BSM200GB170DL
• Description: IGBT Modules N-CH 1.7KV 400A
• Manufacturer: Infineon Technologies

Specifications of BSM200GB170DL

• Configuration: Dual
• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Compliant

I
[A]
I
[A]
E
[mJ]
C
C
450
400
350
300
250
200
150
100
350
300
250
200
150
100
450
400
350
300
250
200
150
100
50
50
50
0
0
0
0,0
0
5
BSM 200 GB 170 DL / 1
Bild / Fig. 1
Ausgangskennlinie (typisch) /
Output characteristic (typical)
I
V
BSM 200 GB 170 DL / 3
Bild / Fig. 3
Übertragungscharakteristic (typisch) /
Transfer characteristic (typical)
I
V
BSM 200 GB 170 DL / 5
Bild / Fig. 5
Schaltverluste (typisch) /
Switching losses (typical)
E
R
C
C
GE
CE
on
gon
= f(V
= f(V
= f (I
= 20V
= 15V
= R
0,5
50
CE
GE
C
goff
6
)
)
), E
= 7,5 , V
1,0
off
100
= f (I
7
1,5
C
), E
CE
150
= 900V, T
Tj = 25°C
Tj = 125°C
rec
2,0
8
= f (I
200
C
)
j
2,5
= 125°C
9
250
3,0
10
300
3,5
11
4,0
350
V
V
I
Tj = 25°C
Tj = 125°C
C
CE
GE
[A]
[V]
[V]
Eon
Erec
Eoff
4,5
12
400
5,0
450
13
I
[A]
I
[A]
E
[mJ]
C
F
450
400
350
300
250
200
150
100
250
200
150
100
450
400
350
300
250
200
150
100
50
50
50
0
0
0
0,0
0,0
0
BSM 200 GB 170 DL / 2
Bild / Fig. 2
Ausgangskennlinienfeld (typisch) /
Output characteristic (typical)
I
T
BSM 200 GB 170 DL / 4
Bild / Fig. 4
Durchlaßkennlinie der Inversdiode (typisch) /
Forward characteristic of inverse diode (typical)
I
BSM 200 GB 170 DL / 6
Bild / Fig. 6
Schaltverluste (typisch) /
Switching losses (typical)
E
I
C
F
C
vj
on
= f(V
= f(V
= 200A, V
= 125°C
= f (R
0,5
F
CE
)
5
)
G
), E
0,5
CE
1,0
off
= 900V, T
= f (R
10
1,5
G
1,0
), E
j
= 125°C
Tj = 25°C
Tj = 125°C
15
2,0
rec
= f (R
2,5
1,5
G
20
)
BSM 200 GB 170 DL
3,0
25
2,0
V
3,5
GE
= 19V
30
4,0
Eon
Eoff
Erec
V
V
V
R
GE
CE
F
G
[V]
[ ]
= 9V
2,5
[V]
4,5
V
V
35
GE
GE
V
GE
= 15V
= 11V
= 13V
5,0
3,0
40