FT150R12KE3_B5 Infineon Technologies, FT150R12KE3_B5 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/327/infineon_technologies_sml.jpg)
FT150R12KE3_B5
Manufacturer Part Number
FT150R12KE3_B5
Description
IGBT Modules N-CH 1.2KV 200A
Manufacturer
Infineon Technologies
Datasheet
1.FT150R12KE3_B5.pdf
(8 pages)
Specifications of FT150R12KE3_B5
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
200A
Gate To Emitter Voltage (max)
±20V
Pin Count
18
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Configuration
Triple
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
200 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 2
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FT150R12KE3_B5FT150R12KE3-B5
Manufacturer:
INFINEON
Quantity:
100
Company:
Part Number:
FT150R12KE3_B5
Manufacturer:
HITTITE
Quantity:
1 001
Technische Information / technical information
IGBT-Module
IGBT-modules
Modul / module
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but guarantees no characteristics.
It is valid with the appropriate technical explanations.
1
M
#
U
+ $
l
M
M
5
#
NS
# B # # `
% #
U $
5 7 $
#
< =
= $
#
#
#
#
$
$
Q
$
7 C
#
$
!
$
Q
#
6 Q
7
!
!
$ =
# #
s
#
$
C # =
C
! $
#
9
1
$
=
#
#
$
9
9
= $
B
$
a
#
!
FT150R12KE3_B5
$
$
$
m8ED>O (
%, ( )* 9
M 9 ( ) N79 (
M
!
!
!
!
A
A
Q !S
Q !S
AT#_ V A mnROEDO (
! A
! A
#
= M)
A
A
#
#
#
A
3
#
#
=
#
#
AT#_ V
!
!
Vorläufige Daten
preliminary data
%&' 4E^
+f.gh
%&' 3r
UD,-
,,pq--p
%D>n
>G,o
M
<
%1
#
I
I
9
k
51i j
9
9)
9
9)
9
)
]
# B
F9
)
)
)
##
##
#L
t#
!+
*
*
*
A
$
N