FZ2400R17KE3_B2 Infineon Technologies, FZ2400R17KE3_B2 Datasheet - Page 6

• Manufacturer Part Number: FZ2400R17KE3_B2
• Description: IGBT Modules 1700 2400A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ2400R17KE3_B2

• Channel Type: N
• Collector-emitter Voltage: 1.7kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Triple Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 3600 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM190
• Ic (max): 2,400.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 190 mm
• Lead Free Status / RoHS Status: Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
'
'
%USi , V7gW
%USi , V7gW
OD98 , 6; Q6 /01 , K
OD98 , 6; Q6 /01 , K
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uCLb0 , V W
uCLb0 , V W
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'
%USi , V7gW
%USi , V7gW
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OD98 , 6; Q6 /01 , K
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)
uCLb0 , V W
uCLb0 , V W
B
B
B
B
1100
1000
900
800
700
600
500
400
300
200
100
100
0,1
10
0
1
0,001
(
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0
600 1200 1800 2400 3000 3600 4200 4800
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H & B
H & B
H & B
H & B
4
4
4
4
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uCLb0 4
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0,01
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FZ2400R17KE3_B2
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4
# V
# V
# V
# V
4
4
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V
V
V
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65
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W
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65
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%USi , VODW
%USi , VODW
%USi , VODW
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7g ,
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B
B
B
B
950
900
850
800
750
700
650
600
550
500
450
400
350
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<6 /01 , K
<6 /01 , K
<6 /01 , K
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2
Vorläufige Daten
preliminary data
OD sQt
# V
# V
# V
# V
V
V
V
V
3
W
W
W
W
W
W
4
W
W
5
6