FZ1200R12KE3 Infineon Technologies, FZ1200R12KE3 Datasheet - Page 5

• Manufacturer Part Number: FZ1200R12KE3
• Description: IGBT Transistors 1200V 1200A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1200R12KE3

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 1200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 5.6 W
• Maximum Operating Temperature: + 125 C
• Package / Case: IHM 130X140-7
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 1,200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Übertragungscharakteristik (typisch)
transfer characteristic (typical)
Durchlasskennlinie der Inversdiode (typisch)
forward caracteristic of inverse diode (typical)
Technische Information / technical information
2400
2100
1800
1500
1200
2400
2100
1800
1500
1200
900
600
300
900
600
300
0
0
0,0
5
0,2
6
0,4
Tvj = 25°C
Tvj = 125°C
Tvj=25°C
Tvj=125°C
0,6
7
0,8
FZ1200R12KE3
5 (8)
1,0
8
1,2
V
V
GE
F
9
[V]
[V]
1,4
1,6
10
1,8
I
V
I
C
F
CE
= f(V
= f(V
= 20V
11
2,0
vorläufige Daten
preliminary data
F
GE
)
DB_FZ1200R12KE3_2.0.xls
)
2,2
12
2,4
2,6
2002-07-29
13