BSM35GB120DN2 Infineon Technologies, BSM35GB120DN2 Datasheet - Page 7

IGBT Modules 1200V 35A DUAL

BSM35GB120DN2

Manufacturer Part Number
BSM35GB120DN2
Description
IGBT Modules 1200V 35A DUAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM35GB120DN2

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
3.2 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
150 nA
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge1
Ic (max)
35.0 A
Vce(sat) (typ)
2.7 V
Technology
IGBT2 Standard
Housing
34 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM35GB120DN2
Manufacturer:
SIEMENS
Quantity:
25
Part Number:
BSM35GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSM35GB120DN2
Quantity:
50
BSM 35 GB 120 DN2
Typ. switching time
I = f (I
Typ. switching losses
E = f (I
par.: V
par.: V
E
t
mWs
10
10
10
C
ns
20
16
14
12
10
C
) , inductive load , T
CE
CE
8
6
4
2
0
3
2
1
) , inductive load , T
0
0
= 600 V, V
= 600 V, V
10
10
20
20
GE
GE
30
30
= ± 15 V, R
= ± 15 V, R
40
40
j
j
= 125°C
= 125°C
50
50
G
G
60
60
= 39
= 39
A
I
A
I
C
C
tdoff
tr
tdon
tf
Eon
Eoff
80
80
7
Typ. switching time
t = f (R
Typ. switching losses
E = f (R
par.: V
par.: V
E
t
mWs
10
10
10
ns
20
16
14
12
10
G
CE
CE
8
6
4
2
0
3
2
1
G
) , inductive load , T
0
0
) , inductive load , T
= 600 V, V
= 600V, V
20
20
40
40
60
60
GE
GE
= ± 15 V, I
= ± 15 V, I
80
80
j
100 120 140
100 120 140
j
= 125°C
= 125°C
C
C
= 35 A
= 35 A
Oct-21-1997
tdoff
tdon
tr
tf
R
Eon
Eoff
R
G
G
180
180

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