BSM20GD60DLCE3224 Infineon Technologies, BSM20GD60DLCE3224 Datasheet - Page 5

• Manufacturer Part Number: BSM20GD60DLCE3224
• Description: IGBT Modules N-CH 600V 32A
• Manufacturer: Infineon Technologies

Specifications of BSM20GD60DLCE3224

• Configuration: Hex
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 32 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
0,2
6
Tvj = 25°C
Tvj = 125°C
0,4
Tvj = 25°C
Tvj = 125°C
7
BSM 20 GD 60 DLC E3224
0,6
8
5 (8)
V
V
GE
0,8
F
9
[V]
[V]
1,0
10
I
C
V
= f (V
CE
1,2
= 20V
11
GE
)
I
F
= f (V
1,4
12
F
BSM 20 GD 60 DLC E3224
)
1,6
13