FD300R12KE3 Infineon Technologies, FD300R12KE3 Datasheet - Page 4
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FD300R12KE3
Manufacturer Part Number
FD300R12KE3
Description
IGBT Transistors 1200V 300A CHOPPER
Manufacturer
Infineon Technologies
Datasheet
1.FD300R12KE3.pdf
(9 pages)
Specifications of FD300R12KE3
Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
300 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
1470 W
Maximum Operating Temperature
+ 125 C
Package / Case
IS5a ( 62 mm )-5
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Ic (max)
300.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FD300R12KE3
Manufacturer:
MICRONAS
Quantity:
7 800
Part Number:
FD300R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FD300R12KE3
Quantity:
55
IGBT-Module
IGBT-Modules
Ausgangskennlinie (typisch)
output characteristic (typical)
Ausgangskennlinienfeld (typisch)
output characteristic (typical)
Technische Information / technical information
600
500
400
300
200
100
600
500
400
300
200
100
0
0
0,0
0,0
FD300R12KE3
0,5
0,5
1,0
VGE=19V
VGE=17V
VGE=15V
VGE=13V
VGE=11V
VGE=9V
Tvj = 25°C
Tvj = 125°C
1,0
1,5
4 (8)
2,0
1,5
V
V
CE
CE
2,5
[V]
[V]
2,0
3,0
I
V
3,5
I
T
C
C
2,5
GE
= f(V
vj
= f(V
= 125°C
= 15V
CE
4,0
CE
)
)
3,0
DB_FD300R12KE3_3.0
4,5
2002-10-02
5,0
3,5