FZ1600R12KL4C Infineon Technologies, FZ1600R12KL4C Datasheet - Page 6

• Manufacturer Part Number: FZ1600R12KL4C
• Description: IGBT Modules 1200V 1600A SINGLE
• Manufacturer: Infineon Technologies

Specifications of FZ1600R12KL4C

• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Configuration: Dual Common Emitter Common Gate
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 2450 A
• Gate-emitter Leakage Current: 600 nA
• Power Dissipation: 10 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 1,600.0 A
• Vce(sat) (typ): 2.1 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm
• Lead Free Status / RoHS Status: Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1400
1200
1000
700
600
500
400
300
200
100
800
600
400
200
0
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
400
2
Eoff
Eon
Erec
Eoff
Eon
Erec
800
FZ 1600 R 12 KL4C
4
1200
E
on
R
gon
= f (I
R
6(8)
I
= R
1600
C
G
E
[A]
[ ]
on
goff
6
I
C
C
) , E
= 1600A , V
=0,91
= f (R
off
2000
, V
G
= f (I
) , E
CE
CE
= 600V, T
= 600V , T
8
C
off
) , E
= f (R
2400
j
= 125°C
j
rec
= 125°C
= f (I
G
) , E
10
C
2800
rec
)
= f (R
Seriendatenblatt_FZ1600R12KL4C
G
3200
)
12