BCW66KHE6327XT Infineon Technologies, BCW66KHE6327XT Datasheet - Page 2

• Manufacturer Part Number: BCW66KHE6327XT
• Manufacturer: Infineon Technologies

Specifications of BCW66KHE6327XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage(max): 75V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 800mA
• Dc Current Gain (min): 180
• Power Dissipation: 500mW
• Frequency (max): 170MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Thermal Resistance
Parameter
Junction - soldering point
BCW66
BCW66K
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
2
C
C
E
C
C
C
C
C
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
CB
EB
= 10 µA, I
= 100 µA - 10 mA, V
= 100 µA - 10 mA, V
= 100 µA - 10 mA, V
= 10 mA, I
= 10 µA, I
= 100 mA, V
= 100 mA, V
= 100 mA, V
= 500 mA, V
= 100 mA, I
= 500 mA, I
= 100 mA, I
= 500 mA, I
= 5 V, I
= 45 V, I
= 45 V, I
C
C
E
B
E
E
= 0
= 0
= 0
B
B
B
B
= 0
= 0
= 0 , T
CE
CE
CE
CE
2)
= 10 mA
= 50 mA
= 10 mA
= 50 mA
thJA
= 1 V, hFE-grp.F
= 1 V, hFE-grp.G
= 1 V, hFE-grp.H
= 1 V, hFE-grp.F, G, H
please refer to Application Note Thermal Resistance
A
CE
CE
CE
= 150 °C
1)
= 1 V, hFE-grp.F
= 1 V, hFE-grp.G
= 1 V, hFE-grp.H
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
R
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
min.
110
180
100
160
250
75
40
45
75
5
-
-
-
-
-
-
-
Values
Value
160
250
350
typ.
215
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.02
0.45
1.25
1.25
250
400
630
0.3
20
20
2007-04-20
-
-
-
-
-
-
-
BCW66
Unit
K/W
Unit
V
µA
nA
-
V