IPB70N10SL16XT Infineon Technologies, IPB70N10SL16XT Datasheet

IPB70N10SL16XT

Manufacturer Part Number

IPB70N10SL16XT

Description

Manufacturer

Infineon Technologies

Type

Power MOSFETr

Datasheet

1.IPB70N10SL16XT.pdf (8 pages)

Specifications of IPB70N10SL16XT

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.016Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Drain Current (max)

70A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

TO-263

Power Dissipation

250W

Lead Free Status / RoHS Status

Compliant

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• Green Package

(lead free)

Feature

• N-Channel

• Enhancement mode

• Logic Level

• 175°C operating temperature

• Avalanche rated

• dv/dt rated

TC=100°C

SIPMOS  Power-Transistor

Type

IPP70N10SL-16

IPB70N10SL-16

IPI70N10SL-16

Maximum Ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by T

Reverse diode d v /d t

Gate source voltage

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

=70A, V

=70 A , V

=25°C

=0V, d i /d t =200A/µs

=25V, R

=25Ω

Package

PG-TO220-3-1

PG-TO263-3-2

PG-TO262-3-1

= 25 °C, unless otherwise specified

P-TO262-3-1

jmax

Ordering Code

SP0002-25708

SP0002-25700

SP000225705

Page 1

Symbol

d v /d t

D puls

tot

j ,

P-TO263-3-2

stg

Marking

N10L16

N10L-16

IPP70N10SL-16, IPB70N10SL-16

-55... +175

55/175/56

Product Summary

Value

DS(on)

±20

280

700

250

P-TO220-3-1

IPI70N10SL-16

2006-02-14

100

Unit

kV/µs

°C

mΩ

2 3

Related parts for IPB70N10SL16XT

IPB70N10SL16XT Summary of contents

Page 1

SIPMOS  Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Package (lead free) Type Package IPP70N10SL-16 PG-TO220-3-1 IPB70N10SL-16 PG-TO263-3-2 IPI70N10SL-16 PG-TO262-3-1 Maximum Ratings Parameter ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area 1) Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...

Page 4

Power dissipation tot C SPP70N10L 280 W 240 220 200 180 160 140 120 100 100 120 140 160 3 Safe operating area ...

Page 5

Typ. output characteristic =25° parameter µs p SPP70N10L 170 P = 250W tot 140 120 100 80 ...

Page 6

Drain-source on-state resistance DS(on) j parameter : SPP70N10L 110 mΩ 98 typ 10 0 -60 - ...

Page 7

Typ. avalanche energy par 700 mJ 600 550 500 450 400 350 300 250 200 150 100 50 0 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device ...

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