ML610Q422-NNNTBZ03A7 Rohm Semiconductor, ML610Q422-NNNTBZ03A7 Datasheet - Page 376

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ML610Q422-NNNTBZ03A7

Manufacturer Part Number
ML610Q422-NNNTBZ03A7
Description
MCU 8BIT 32K FLASH 22CH 120-TQFP
Manufacturer
Rohm Semiconductor
Series
-r

Specifications of ML610Q422-NNNTBZ03A7

Core Processor
nX-U8/100
Core Size
8-Bit
Speed
4.2MHz
Connectivity
I²C, SSP, UART/USART
Peripherals
LCD, Melody Driver, POR, PWM, WDT
Number Of I /o
14
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
-
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
1.1 V ~ 3.6 V
Data Converters
A/D 2x12b, 2x24b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 70°C
Package / Case
100-TFQFP
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Quantity
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29.3 Flash Memory Rewrite Function
Flash memory erase/write can be performed with the the memory mounted on board by using the commands from the
on-chip debug emulator (uEASE). For more details on the on-chip debug emulator, see “uEASE User’s Manual”.
Table 29-2 shows the Flash memory rewrite functions.
Table 29-3 shows the conditions and specifications of Flash memory rewrite.
Note:
When performing Flash memory rewrite (erase, write), a voltage within the range from 3.0V to 3.6 V needs to be applied
to the power supply voltage V
Chip erase
Block erase
1-word write
Random read
Rewrite count
Operating temperature
Operating voltage
Chip-erase time
Block-erase time
1-word (16 bits) write
Overall-word (16K × 16 bits) write
Table 29-3 Specifications of Flash Memory Rewrite
DD
Parameter
Function
.
Table 29-2 Flash Memory Rewrite Functions
V
V
V
PP
DD
DDL
29 – 2
Erase of 16 Kwords (overall area)
Erase of 8 Kwords (16 Kbytes)
Write of 1 word (2 bytes)
Read of input address
80
0°C to 40°C
8 V (Typ.) (Supplied from uEASE)
3.0V to 3.6 V
2.7 V (Typ.) (Supplied from uEASE)
77 ms (Typ.), 100 ms (Max.)
77 ms (Typ.), 100 ms (Max.)
41 µs (Typ.), 64 µs (Max.)
Approx. 0.68s (Typ.), Approx. 1.05s (Max.)
Specifications
ML610Q421/ML610Q422 User’s Manual
Outline
Chapter 29 On-Chip Debug Function

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