MT49H32M18HT-33:A Micron Technology Inc, MT49H32M18HT-33:A Datasheet - Page 6

• Manufacturer Part Number: MT49H32M18HT-33:A
• Manufacturer: Micron Technology Inc
• Type: RLDRAMr

Specifications of MT49H32M18HT-33:A

• Organization: 32Mx18
• Address Bus: 24b
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 609mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

General Description
PDF: 09005aef80fe62fb/Source: 09005aef809f284b
576Mb_RLDRAM_II_CIO_D2.fm - Rev. H 6/09 EN
The Micron
designed for high bandwidth data storage—telecommunications, networking, and
cache applications, etc. The chip’s 8-bank architecture is optimized for sustainable high
speed operation.
The DDR I/O interface transfers two data words per clock cycle at the I/O balls. Output
data is referenced to the free-running output data clock.
Commands, addresses, and control signals are registered at every positive edge of the
differential input clock, while input data is registered at both positive and negative edges
of the input data clock(s).
Read and write accesses to the RLDRAM are burst-oriented. The burst length (BL) is
programmable from 2, 4, or 8 by setting the mode register.
The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output
drivers.
Bank-scheduled refresh is supported with the row address generated internally.
The µBGA 144-ball package is used to enable ultra high-speed data transfer rates and a
simple upgrade path from early generation devices.
576Mb: x9, x18, x36 2.5V Vext, 1.8V Vdd, HSTL, CIO, RLDRAM II
®
reduced latency DRAM (RLDRAM
6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
®
) II is a high-speed memory device
General Description
©2004 Micron Technology, Inc. All rights reserved.