IKW40T120XK Infineon Technologies, IKW40T120XK Datasheet - Page 12

• Manufacturer Part Number: IKW40T120XK
• Manufacturer: Infineon Technologies

Specifications of IKW40T120XK

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / Rohs Status: Compliant

Power Semiconductors
40A
35A
30A
25A
20A
15A
10A
Figure 23. Typical reverse recovery time as
Figure 25. Typical reverse recovery current
5A
0A
600ns
500ns
400ns
300ns
200ns
100ns
400A/µs
0ns
400A/µs
di
di
a function of diode current slope
(V
Dynamic test circuit in Figure E)
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
/dt,
R
R
=600V, I
=600V, I
600A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
600A/µs
F
F
=40A,
=40A,
800A/µs
800A/µs
1000A/µs
T
T
1000A/µs
J
J
T
=150°C
=25°C
T
J
=150°C
J
=25°C
TrenchStop
12
Figure 24. Typical reverse recovery charge
Figure 26. Typical diode peak rate of fall of
8µC
6µC
4µC
2µC
0µC
-400A/µs
-300A/µs
-200A/µs
-100A/µs
®
-0A/µs
400A/µs
Series
400A/µs
di
di
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
R
/dt,
R
=600V, I
=600V, I
600A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
600A/µs
F
F
=40A,
=40A,
IKW40T120
800A/µs
800A/µs
Rev. 2.2
1000A/µs
T
1000A/µs
J
T
=150°C
T
T
J
=25°C
J
J
=150°C
=25°C
Sep 08