BTS7810KNT Infineon Technologies, BTS7810KNT Datasheet

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BTS7810KNT

Manufacturer Part Number
BTS7810KNT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS7810KNT

Switch Type
High Side/Low Side
Power Switch Family
BTS7810
Input Voltage
-10 to 16V
Power Switch On Resistance
35mOhm
Output Current
5mA
Number Of Outputs
4
Mounting
Surface Mount
Supply Current
5mA
Package Type
TO-263
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Pin Count
15 +Tab
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTS7810KNTMA1
Manufacturer:
NXP
Quantity:
12 000
TrilithIC
Data Sheet
1
1.1
• Quad D-MOS switch
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low
• Maximum peak current: typ. 42 A @ 25 °C=
• Very low quiescent current: typ. 4 µA @ 25 °C=
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag for over temperature
• Open load detection in Off-mode
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
Type
BTS 7810 K
1.2
The BTS 7810 K is part of the TrilithIC
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7810 K can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS
which combines low
high-side switch is fully protected and contains the control and diagnosis circuit. To
achieve low
manufactured in S-FET 2 logic level technology. The equivalent standard product is the
SPD30N06S2L-13.
Data Sheet
switch (typical values @ 25 °C)
R
Overview
Features
Description
DS ON
: 26 mΩ high-side switch, 14 mΩ low-side
R
DS ON
R
and fast switching performance, the low-side switches are
DS ON
vertical DMOS power stages with CMOS control circuit. The
Ordering Code
Q67060-S6129
family containing three dies in one package:
1
Package
P-TO263-15-1
P-TO263-15-1
BTS 7810 K
®
technology
2003-03-11

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BTS7810KNT Summary of contents

Page 1

... BTS 7810 K can be used in H-bridge- as well as in any other configuration. The double high-side is manufactured in SMART SIPMOS R which combines low DS ON high-side switch is fully protected and contains the control and diagnosis circuit achieve low and fast switching performance, the low-side switches are DS ON manufactured in S-FET 2 logic level technology ...

Page 2

Pin Configuration (top view SL1 2 IL1 IH1 5 ST1 6 SH1 7 DHVS 8 GND 9 IH2 10 ST2 11 SH2 12 IL2 13 SL2 Figure 1 Data Sheet Molding ...

Page 3

... Not connected Source of low-side switch 1 Analog input of low-side switch 1 Not connected Digital input of high-side switch 1 Status of high-side switch 1; open Drain output Source of high-side switch 1 Drain of high-side switches and power supply voltage Ground of high-side switches Digital input of high-side switch 2 Status of high-side switch 2; open Drain output ...

Page 4

Functional Block Diagram 6 ST1 11 ST2 5 IH1 10 IH2 9 GND 3 IL1 13 IL2 Figure 2 Block Diagram Data Sheet DHVS 8, 17 Diagnosis Biasing and Protection Driver IN OUT ...

Page 5

... Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. In the case of overloaded high-side switches the status output is set to low. Overtemperature Protection The high-side switches incorporate an overtemperature protection circuit with hysteresis which switches off the output transistors and sets the status output to low ...

Page 6

... The two status flag outputs are an open drain output with Zener-diode which require a pull-up resistor, c.f. the application circuit on page 15. ST1 and ST2 provide separate diagnosis for each high-side switch. Various errors as listed in the table “Diagnosis” are detected by switching the open drain output ST1/2 to low. Forward current in the integrated body diode of the highside switch may cause undefined voltage levels at the corresponding status output ...

Page 7

... HS-drain current HS-input current HS-input voltage Note: * internally limited Status Output ST (Pins ST1 and ST2) Status pull up voltage Status Output current Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2) Drain- source break down voltage LS-drain current LS-drain current T = 85°C C LS-input voltage ...

Page 8

... ESD Protection (Human Body Model acc. MIL STD 883D, method 3015.7 and EOS/ ESD assn. standard S5.1 - 1993) Input LS-Switch Input HS-Switch Status HS-Switch Output LS and HS-Switch Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. 3.2 Operating Range – ...

Page 9

... Supply current Leakage current of highside switch Leakage current through logic GND in free wheeling condition Current Consumption LS-switch Input current Leakage current of lowside switch Under Voltage Lockout (UVLO) HS-switch Switch-ON voltage Switch-OFF voltage Switch ON/OFF hysteresis Data Sheet T < 150 ° < j Symb ...

Page 10

... Static drain-source on-resistance of lowside switch Static path on-resistance Short Circuit of highside switch to GND Initial peak SC current Initial peak SC current Initial peak SC current Note: Integrated protection functions are designed to prevent IC destruction under fault conditions. Protection functions are not designed for continuous or repetitive operation. ...

Page 11

... Parameter Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis Status Flag Output ST of highside switch Low output voltage Leakage current Zener-limit-voltage Status change after positive input slope with open load Status change after negative input slope with ...

Page 12

... Switch-OFF time 5V; = 16Ω IL Gate Input to source charge; Input to drain charge; Input charge total; Input plateau voltage; Note: switching times and input charges are not subject to production test - specified by design Data Sheet T < 150 ° < j Symb Limit Values ol min. typ. max. t – ...

Page 13

... – 40 °C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Control Inputs of highside switches H-input voltage L-input voltage Input voltage hysterese H-input current L-input current Input series resistance Zener limit voltage Control Inputs IL1, 2 Gate-threshold-voltage Note: The listed characteristics are ensured over the operating range of the integrated circuit ...

Page 14

I ST LK1 I ST1 ST1 I ST LK2 I ST2 ST2 V ST1 V STL1 I IH1 IH1 V V ST2 STZ1 V STL2 V I STZ2 IH1 IH2 V IH1 GND V IH2 I GND I LKCL I ...

Page 15

R Q 100 kΩ Ω Ω Ω 100 kΩ Ω Ω Ω ST1 kΩ Ω Ω Ω ST2 kΩ Ω Ω Ω IH1 5 IH2 10 ...

Page 16

Package Outlines P-TO263-15-1 (Plastic Transistor Single 5.56 ±0.15 1 ±0.2 X1, 1) 4.8 1) Typical Metal surface min 3.57 7.03 6.9 All metal surfaces tin plated, except area of cut. Footprint Footprint Sorts ...

Page 17

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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