SP000009107ZH Infineon Technologies, SP000009107ZH Datasheet - Page 3
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SP000009107ZH
Manufacturer Part Number
SP000009107ZH
Description
Manufacturer
Infineon Technologies
Datasheet
1.SP000009107ZH.pdf
(9 pages)
Specifications of SP000009107ZH
Operating Temperature (max)
70C
Mounting
Surface Mount
Pin Count
8
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
16-Bit Security Controller with MMU in 0.22µm CMOS Technology
136-Kbyte ROM, 5052 bytes RAM, 32-Kbyte EEPROM
1100-Bit ACE and 112-Bit / 192-Bit DDES-EC2 Accelerator
Features
Short Product Information
16-bit microcomputer in 0.22 µm CMOS
technology
Instruction set opcode compatible with
standard SAB 8051 processor
Enhanced 16-bit arithmetic
Additional powerful instructions optimized
for chip card applications
Dedicated, non-standard architecture with
execution time 6 times faster (18 times
by PLLmax) than standard SAB 8051
processor at same external clock
134 Kbytes User ROM for application
programs
Additional 2 Kbytes reserved ROM for
Resource Management System (RMS+
Superslim) with intelligent E² write/erase
routines
32 Kbytes Superslim-EEPROM
4Kbytes XRAM, 256 bytes internal RAM,
700 bytes Crypto RAM.
Memory Management and Protection
Unit (MMU)
Dual Key Triple DES (DDES) and EC2
GF (2
Advanced Crypto Engine for up to 2048
bit RSA computation
Certified RSA 2048 library available
(refer to product brief)
CRC Module
Interrupt Module
PLL up to 15 MHz
Two 16-bit Autoreload Timer
Power saving sleep mode
Ext. Clock freq. 1 to 7.5 MHz for int.
Clock
Ext. Clock freq. 1 to 5 MHz for int. Clock
UART for handling serial interface in
accordance with ISO/IEC 7816 part 3
supporting transmission protocols T=1
and T=0
11 MHz @ 1.62V-5.5V
n
) Accelerator
15 MHz @ 2.7V-5.5V
3 / 10
< 10 mA @ 5.5 V
< 6 mA @ 3.3 V
< 4 mA @ 1.98 V
Superslim-EEPROM
Memory Management and Protection Unit
Security Features
Operation state monitoring mechanism
I/O routines realized in software executable
Supply voltage range:1.62 to 5.5 V
Temperature range: -25 to +85°C
ESD larger than 6 kV
Reading and programming byte by byte
Flexible page mode for 1 to 64 bytes
write/erase operation
32 bytes security area (OTP)
Fast personalization mode 0.63 ms @15MHz
Erase + Write time < 4.0 ms @15MHz
Minimum of 500.000 write/erase cycles at
25°C
Data retention for a minimum of 10 years
EEPROM programming voltage generated on
chip
Low and high voltage sensors
Frequency sensors and filters
Light Sensor
Glitch Sensor
Temperature Sensor
Life Test Function for Sensors
Current consumption
Addressable memory up to 1 MByte
Separates OS (system mode) and
application (user mode)
System routines called by traps
OS can restrict access to peripherals in
application mode
Code execution from XRAM possible
SLE 66CX322P
11.02