IPA65R190E6 Infineon Technologies, IPA65R190E6 Datasheet - Page 5

• Manufacturer Part Number: IPA65R190E6
• Description: SP000863904_COOL MOS_TU_RO
• Manufacturer: Infineon Technologies

Specifications of IPA65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220 FullPAK
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

3
Table 3
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Table 4
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wavesoldering only allowed at
leads
Table 5
Parameter
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wave- & reflow soldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm
Final Data Sheet
PCB is vertical without air stream cooling.
Thermal characteristics
Thermal characteristics non FullPAK
Thermal characteristics FullPAK
Thermal characteristics SMD
Symbol
R
R
T
Symbol
R
R
T
Symbol
R
R
T
sold
sold
sold
thJC
thJA
thJC
thJA
thJC
thJA
Min.
-
-
-
Min.
-
-
-
Min.
-
-
-
-
5
Typ.
-
-
-
Typ.
-
-
-
Typ.
-
-
35
-
Values
Values
Values
650V CoolMOS™ E6 Power Transistor
2
copper area (thickness 70µm) for drain connection.
Max.
0.83
62
260
Max.
3.7
80
260
Max.
0.83
62
-
260
Unit
°C/W
°C
Unit
°C/W
°C
Unit
°C/W
°C
Thermal characteristics
Note /
Test Condition
leaded
1.6 mm (0.063 in.)
from case for 10 s
Note /
Test Condition
leaded
1.6 mm (0.063 in.)
from case for 10 s
Note /
Test Condition
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6cm
area
reflow MSL1
Rev. 2.0, 2011-05-13
1)
IPx65R190E6
2
cooling