PIC16F887-E/P Microchip Technology Inc., PIC16F887-E/P Datasheet - Page 252

• Manufacturer Part Number: PIC16F887-E/P
• Description: 40 PIN, 14KB FLASH, 368 RAM, 36 I/O, PDIP
• Manufacturer: Microchip Technology Inc.

Specifications of PIC16F887-E/P

• A/d Inputs: 14-Channel, 10-Bit
• Comparators: 2
• Cpu Speed: 5 MIPS
• Eeprom Memory: 256 Bytes
• Frequency: 20 MHz
• Input Output: 35
• Interface: I2C/SPI/USART
• Memory Type: Flash
• Number Of Bits: 8
• Package Type: 40-pin PDIP
• Programmable Memory: 14K Bytes
• Ram Size: 368 Bytes
• Resistance, Drain To Source On: Bytes
• Serial Interface: MSSP or EUSART
• Speed: 20 MHz
• Timers: 2-8-bit, 1-16-bit
• Voltage, Range: 2-5.5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PIC16F882/883/884/886/887
17.4
DS41291E-page 250
DC CHARACTERISTICS
D020E
D021E
D022E
D023E
D024E
D025E*
D026E
D027E
D028E
Note 1:
Param
No.
2:
*
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
DC Characteristics:
Power-down Base
Current (I
Device Characteristics
These parameters are characterized but not tested.
only and are not tested.
The peripheral current is the sum of the base I
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base I
current from this limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
PD
)
(2)
PIC16F883/884/886/887
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ†
0.05
0.15
0.35
0.30
0.36
120
125
3.5
4.0
5.0
42
85
32
60
30
45
75
39
59
98
90
1
2
3
Max.
127
160
120
117
156
130
170
11
15
28
30
35
65
45
78
70
90
91
18
21
24
12
16
9
DD
or I
-E (Extended)
Units
-40°C ≤ T
PD
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
μA
and the additional current consumed when this
V
A
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
3.0
5.0
DD
≤ +125°C for extended
WDT, BOR, Comparators, V
T1OSC disabled
WDT Current
BOR Current
Comparator Current
comparators enabled
CV
CV
T1OSC Current
A/D Current
progress
VP6 Reference Current
REF
REF
© 2008 Microchip Technology Inc.
Current
Current
Conditions
(1)
(1)
(1)
, no conversion in
(1)
(1)
Note
(1)
(high range)
(low range)
, 32.768 kHz
(1)
, both
DD
DD
or I
.
REF
PD
and