PIC16F785-I/P Microchip Technology Inc., PIC16F785-I/P Datasheet - Page 143
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PIC16F785-I/P
Manufacturer Part Number
PIC16F785-I/P
Description
MCU, 8-Bit, 2KW Flash, 128 RAM, 18 I/O, DIP-20
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC16F785-IP.pdf
(184 pages)
Specifications of PIC16F785-I/P
A/d Inputs
12-Channel, 10-Bit
Comparators
2
Cpu Speed
5 MIPS
Eeprom Memory
256 Bytes
Input Output
17
Memory Type
Flash
Number Of Bits
8
Package Type
20-pin PDIP
Programmable Memory
3.5K Bytes
Ram Size
128 Bytes
Speed
20 MHz
Timers
2-8-bit, 1-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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19.0
Absolute Maximum Ratings
Ambient temperature under bias................................................................................................................. -40 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ........................................................................................................-0.3 to +13.5V
Voltage on RB6 open-drain pin with respect to Vss .....................................................................................-0.3 to +8.5V
Voltage on all other pins with respect to V
Total power dissipation
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTC (combined) .................................................................200 mA
Maximum current sourced PORTA, PORTB, and PORTC (combined).................................................................200 mA
Note 1:
© 2006 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Power dissipation is calculated as follows: P
Voltage spikes below V
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin, rather than
pulling this pin directly to V
DD
with respect to V
IK
(1)
(1)
OK
(V
DD
(PDIP and SOIC).........................................................................................................800 mW
(SSOP) ........................................................................................................................600 mW
I
SS
(Vo < 0 or Vo >V
< 0 or V
pin ..............................................................................................................................250 mA
pin ...........................................................................................................................300 mA
(†)
SS
I
SS
> V
............................................................................................................ -0.3 to +6.5V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
DD
.
SS
)
DD
................................................................................. -0.3V to (V
)
Preliminary
DIS
= V
DD
x {I
DD
– ∑ I
PIC16F785/HV785
OH
} + ∑ {(V
DD
– V
OH
) x I
DS41249D-page 141
OH
} + ∑(V
DD
O
+ 0.3V)
l x I
20 mA
20 mA
OL
).
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