BGX50AE6327XT Infineon Technologies, BGX50AE6327XT Datasheet

Page 1

Silicon Switching Diode Array Bridge configuration High-speed switching diode chip Pb-free (RoHS compliant) package Qualified according AEC Q101 BGX50A Type BGX50A Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage Reverse current 150 ° Forward voltage I = 100 Characteristics Diode capacitance ...

Page 3

Reverse current Parameter R BGX 50A max. 5 70V typ Forward current ...

Page 4

Forward current BGX50A 160 mA 120 100 105 120 °C 150 BGX50A... 2007-03-27 ...

Page 5

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...