IDC04S60CE Infineon Technologies, IDC04S60CE Datasheet - Page 2

• Manufacturer Part Number: IDC04S60CE
• Description: Schottky (Diodes & Rectifiers) SiC Schottky Diode 600V 4A
• Manufacturer: Infineon Technologies

Specifications of IDC04S60CE

• Packages: S--0
• Technology: thinQ!™ SiC diode chips
• Vds (max): 600.0 V
• If (max): 4.0 A
• If,sm (max): 32.0 A
• Vf (typ): 1.7 V
• Other names: IDC04S60CEZJ

Maximum Ratings
Parameter
Repetitive peak reverse voltage
DC blocking voltage
Continuous forward current limited by
T
Surge non repetitive forward current
sine halfwave
Repetitive peak forward current
limited by T
Non-repetitive peak forward current
Operating junction and storage
temperature
Static Characteristics (tested on wafer)
Parameter
Reverse current
Diode forward voltage
Dynamic Characteristics, at
Parameter
Total capacitive charge
Switching time
Total capacitance
1)
di/dt), different from t
absence of minority carrier injection
Edited by INFINEON Technologies, AIM IMM, Edition 1.1, 27.01.2009
vjmax
t
c
is the time constant for the capacitive displacement current waveform (independent from T
vjmax
1)
rr
which is dependent on T
I
V
Q
t
C
Symbol
Symbol
R
c
F
C
T
vj
= 25 C, unless otherwise specified, tested at component
Symbol
V
V
I
I
I
I
T
T
F
F , S M
F , R M
F , m a x
d i / d t = 2 0 0 A / s
v j
s t g
R R M
D C
V
I
V
,
F
f = 1 M H z
R
I
R
< = I
F
=60 0 V
= 4 0 0 V
=4 A
vj
F , m a x
, I
Conditions
Conditions
LOAD
T
and di/dt. No reverse recovery time constant t
C
T
T
= 100 C , T
T
T
C
C
vj
vj
T
T
V
V
=25 C , t
=25 C , t
vj
vj
V
= 1 50 °C
= 1 50 °C
R
R
T
T
Condition
= 25 °C
= 25 °C
=30 0 V
=60 0 V
R
vj
vj
D=0 . 1
=1 V
< 150°C
= 25 °C
vj
P
p
=10 ms
=1 0µs
= 1 50 C ,
min.
min.
IDC04S60CE
Value
Value
Typ.
Typ.
130
0.5
1.7
20
20
8
-55...+175
Value
600
600
132
32
18
4
max.
max.
vj
<10
1.9
50
, I
LOAD
rr
Unit
Unit
Unit
and
due to
p F
µA
nC
ns
V
V
A
C