FDMC7678 Fairchild Semiconductor, FDMC7678 Datasheet - Page 3

• Manufacturer Part Number: FDMC7678
• Description: MOSFET Power 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC7678

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 mOhms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
Typical Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
-75
1.0
Figure 3. Normalized On Resistance
0.0
Figure 1.
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 17.5 A
= 5 V
= 10 V
vs Junction Temperature
1.5
T
V
V
-25
V
J
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
DS
,
GS
0.5
On Region Characteristics
JUNCTION TEMPERATURE (
V
, GATE TO SOURCE VOLTAGE (V)
,
T
GS
DRAIN TO SOURCE VOLTAGE (V)
V
V
= 4.5 V
J
GS
GS
= 3 V
= 150
0
= 10 V
= 6 V
2.0
V
GS
o
25
C
μ
= 3.5 V
s
1.0
50
T
2.5
T
J
J
μ
= -55
= 25°C unless otherwise noted
s
75
T
J
= 25
o
1.5
o
100 125 150
C
C )
3.0
o
C
3.5
2.0
3
0.01
100
0.1
12
10
10
4
3
2
1
0
Figure 2.
8
6
4
2
Figure 4.
1
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
10
= 0 V
SD
0.2
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
V
T
I
Source Voltage
D
4
Source to Drain Diode
GS
J
,
,
20
= 150
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
T
= 3 V
0.4
J
= 25
o
C
30
V
o
C
GS
μ
s
0.6
= 4.5 V
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
T
D
40
J
= 17.5 A
= 125
V
GS
0.8
T
= 6 V
o
J
50
C
= -55
T
8
J
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= 25
V
V
o
GS
1.0
GS
C
60
= 3.5 V
o
= 10 V
C
μ
s
1.2
70
10