FDMC86102LZ Fairchild Semiconductor, FDMC86102LZ Datasheet - Page 6

• Manufacturer Part Number: FDMC86102LZ
• Description: MOSFET Power 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC86102LZ

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 7 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP-8
• Gate Charge Qg: 15.3 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

FDMC86102LZ Rev. C
©2011 Fairchild Semiconductor Corporation
Dimensional Outline and Pad Layout
PIN#1 QUADRANT
PIN #1 IDENT
0.08 C
0.10 C
(4X)
0.8 MAX
2X
SEATING
0.55
0.45
R0.15
PLANE
0.30
0.10 C
0.05
0.00
1.15
0.65
8
1
TOP VIEW
SIDE VIEW
BOTTOM VIEW
3.30
2.32
2.22
1.95
0.79
5
4
0.40
0.30
3.30
1.95
B
2.05
0.10
0.05
A
2X
(8X)
(0.20)
0.35
0.10 C
C A B
C
6
B. DIMENSIONS ARE IN MILLIMETERS.
A. DOES NOT CONFORM TO JEDEC
C. DIMENSIONS AND TOLERANCES PER
D. LAND PATTERN RECOMMENDATION IS
E. DRAWING FILE NAME : MLP08Srev1
BASED ON FSC DESIGN ONLY
ASME Y14.5M, 1994
REGISTRATION MO-229
RECOMMENDED LAND PATTERN
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