FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 5

• Manufacturer Part Number: FDMS3602S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3602S

• Configuration: Dual (MOSFET & SyncFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0044ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
100
20
10
0.1
10
10
1
Figure 7.
0.01
8
6
4
2
0
0.01
1
0
Figure 9.
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
I
D
Figure 11. Forward Bias Safe
J
A
θ
= 15 A
JA
= MAX RATED
= 25
= 125
Switching Capability
V
o
C
Gate Charge Characteristics
0.1
DS
0.1
t
AV
o
5
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C/W
Unclamped Inductive
, TIME IN AVALANCHE (ms)
Q
(
g
on
, GATE CHARGE (nC)
)
T
J
=
125
1
10
1
T
J
o
C
= 25
V
DD
V
o
T
DD
C
= 10 V
J
10
= 100
= 16 V
10
15
o
V
C
DD
1s
DC
1 ms
10 ms
100 ms
100
10s
= 13 V
μ
100
s
100
20
200
T
J
5
= 25°C unless otherwise noted
1000
2000
1000
80
60
40
20
100
100
0.5
0
10
10
Figure 10.
25
1
10
0.1
Figure 12.
-4
Limited by Package
f = 1 MHz
V
Figure 8.
Current vs Case Temperature
GS
10
= 0 V
-3
50
V
DS
Maximum Continuous Drain
T
Power Dissipation
to Source Voltage
V
C
, DRAIN TO SOURCE VOLTAGE (V)
GS
10
,
Single Pulse Maximum
Capacitance vs Drain
CASE TEMPERATURE (
= 4.5 V
t, PULSE WIDTH (sec)
-2
75
10
1
-1
V
GS
100
= 10 V
1
R
SINGLE PULSE
R
T
θ
A
θ
10
JC
o
JA
C )
= 25
= 3.5
125
= 125
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C
C
C
o
C
iss
oss
rss
10
100
o
C/W
o
C/W
150
1000
25