FDMS3604AS Fairchild Semiconductor, FDMS3604AS Datasheet - Page 2

• Manufacturer Part Number: FDMS3604AS
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3604AS

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current,
Forwad
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1:
V
Q2:
V
Q1:
V
Q2:
V
V
V
D
D
D
D
D
D
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
DD
GS
GS
= 250 μA, V
= 1 mA, V
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 10 mA, referenced to 25 °C
= 24 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, V
= 0 V to 10 V Q1
= 0 V to 4.5 V
= 20 V, V
= V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 15 V, I
= 15 V, I
DS
DS
Test Conditions
, I
, I
2
D
D
GS
D
D
D
D
D
D
D
D
GS
GS
DS
= 13 A
= 23 A
D
D
GS
= 13 A, R
= 23 A, R
= 250 μA
= 1 mA
GS
= 13 A , T
= 23 A , T
= 13 A
= 23 A
= 0 V
= 11 A
= 21 A
= 0 V
= 0 V, f = 1 MHZ
= 0 V, f = 1 MHZ
= 0 V
= 0 V
V
I
Q2
V
I
D
D
DD
DD
= 13 A
= 23 A
= 15 V,
= 15 V,
J
J
GEN
GEN
= 125 °C
= 125 °C
= 6 Ω
= 6 Ω
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min
1.1
1.1
0.2
0.2
30
30
Typ
1273
3078
1169
130
461
1.8
5.8
8.5
7.8
2.6
2.6
15
12
0.6
0.8
61
-6
-5
50
98
2
2
8.2
2.5
4.8
2.2
3.4
3.9
3.1
5.5
13
20
31
21
47
10
22
9
1695
4095
1555
10.8
Max
500
100
100
www.fairchildsemi.com
615
150
2.7
2.6
3.5
11
75
1
3
8
4
2
3
16
23
10
10
32
50
10
10
29
66
14
31
mV/°C
mV/°C
Units
mΩ
μA
μA
nA
nA
pF
pF
pF
V
V
S
Ω
nC
nC
nC
nC
ns
ns
ns
ns