IPG20N06S2L-35 Infineon Technologies, IPG20N06S2L-35 Datasheet
IPG20N06S2L-35
Manufacturer Part Number
IPG20N06S2L-35
Description
MOSFET Power Dual N-Ch 55V MOSFET
Manufacturer
Infineon Technologies
Specifications of IPG20N06S2L-35
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
35 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
20 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TDSON-8
Lead Free Status / Rohs Status
Details
Other names
IPG20N06S2L35XT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPG20N06S2L-35
Manufacturer:
ST
Quantity:
30 000
Company:
Part Number:
IPG20N06S2L-35
Manufacturer:
INF
Quantity:
9 999
Part Number:
IPG20N06S2L-35
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPG20N06S2L-35A
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
OptiMOS
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
one channel active
Pulsed drain current
one channel active
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
one channel active
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPG20N06S2L-35
®
Power-Transistor
2)
2)
Package
PG-TDSON-8-4
j
=25 °C, unless otherwise specified
2, 4)
4)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
2N06L35
stg
T
T
-
I
-
-
T
-
-
D
C
C
C
=10A
page 1
=25 °C, V
=100 °C, V
=25 °C
Conditions
GS
Product Summary
V
R
I
GS
D
=10 V
DS
DS(on),max
=10 V
1)
4)
-55 ... +175
55/175/56
Value
100
±20
20
20
80
15
65
IPG20N06S2L-35
PG-TDSON-8-4
55
35
20
2009-09-07
Unit
A
mJ
A
V
W
°C
V
m
A