IPG20N04S4L-08 Infineon Technologies, IPG20N04S4L-08 Datasheet - Page 2

• Manufacturer Part Number: IPG20N04S4L-08
• Description: MOSFET Power N-Channel 40V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPG20N04S4L-08

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 8.2 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 20 A
• Power Dissipation: 54 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TDSON-8
• Lead Free Status / Rohs Status: Details
• Other names: IPG20N04S4L08XT

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
4)
4)
j
=25 °C, unless otherwise specified
4)
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=85 °C
page 2
=V
=40 V, V
=18 V, V
=0 V, I
=16 V, V
=4.5 V, I
=10 V, I
2
Conditions
cooling area
GS
2)
, I
D
D
= 1 mA
D
= 22µA
D
GS
GS
DS
=17A
=10 A
=0 V,
=0 V,
=0 V
3)
min.
1.2
40
-
-
-
-
-
-
-
-
Values
0.01
typ.
100
1.7
9.2
7.2
60
1
-
-
-
IPG20N04S4L-08
max.
10.9
100
100
2.8
2.2
8.2
1
-
-
-
2010-10-05
Unit
K/W
V
µA
nA
mW