FDMS7620S Fairchild Semiconductor, FDMS7620S Datasheet - Page 5

• Manufacturer Part Number: FDMS7620S
• Description: MOSFET Power 30V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS7620S

• Configuration: Dual (MOSFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 20 mOhms
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.1 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0152ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS7620S Rev.C1
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
10
20
10
0.001
8
6
4
2
0
Figure 7.
1
0
1000
I
100
D
0.1
Figure 9.
10
= 10.1 A
10
1
-4
Switching Capability
Gate Charge Characteristics
0.01
t
AV
2
Unclamped Inductive
, TIME IN AVALANCHE (ms)
Q
g
, GATE CHARGE (nC)
V
DD
T
10
J
= 125
= 10 V
-3
0.1
Figure 11.
4
V
T
o
DD
J
C
= 25
= 20 V
V
T
DD
o
J
C
= 100
= 15 V
6
1
10
Single Pulse Maximum Power Dissipation
-2
o
C
t, PULSE WIDTH (sec)
10
8
10
T
-1
J
5
= 25°C unless otherwise noted
1000
100
0.01
10
0.1
50
10
0.1
1
0.01
1
Figure 8.
f = 1 MHz
V
SINGLE PULSE
T
R
T
Figure 10.
GS
J
A
θ
JA
THIS AREA IS
LIMITED BY r
= MAX RATED
= 25
= 0 V
= 125
V
o
V
DS
C
to Source Voltage
DS
0.1
, DRAIN TO SOURCE VOLTAGE (V)
o
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
C/W
Capacitance vs Drain
DS
10
Forward Bias Safe
(
on
)
1
1
100
SINGLE PULSE
R
θ
JA
10
= 125
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10
o
C
C
10 ms
100 ms
1s
100
1 ms
10s
DC
C/W
C
oss
rss
iss
μ
100200
s
1000
30