PTFA261702E V1 Infineon Technologies
PTFA261702E V1
Manufacturer Part Number
PTFA261702E V1
Description
MOSFET Power RFP-LDMOS GOLDMOS 8
Manufacturer
Infineon Technologies
Specifications of PTFA261702E V1
Configuration
Dual
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, + 12 V
Power Dissipation
643 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
30275
Minimum Operating Temperature
- 40 C
Lead Free Status / Rohs Status
Details
Other names
FA261702EV1XP