FDS6676S Fairchild Semiconductor, FDS6676S Datasheet - Page 5

• Manufacturer Part Number: FDS6676S
• Description: MOSFET Power 30V N-Ch PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6676S

• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 14.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition
• Other names: FDS6676S_NL

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676S.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
Figure 12. FDS6676S SyncFET body diode
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
reverse recovery characteristic.
TIME : 12.5ns/div
typ t
typ I
TIME : 12.5ns/div
RR
RM
typ t
typ I
: 31ns
: 1.8A
RR
RM
: 31ns
: 2.4A
(continued)
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.00001
0.0001
leakage versus drain-source voltage and
Figure 14. SyncFET body diode reverse
0.001
0.01
0.1
0
5
temperature.
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
A
A
A
= 125
= 100
= 25
15
o
C
o
o
C
C
20
FDS6676S Rev F1 (W)
25
30