BSC091N03MSC G Infineon Technologies

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BSC091N03MSC G

Manufacturer Part Number

BSC091N03MSC G

Description

MOSFET Power N-KANAL POWER MOS

Manufacturer

Infineon Technologies

Specifications of BSC091N03MSC G

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0091 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

12 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TDSON

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Other names

BSC091N03MSCGXT

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Related keywords

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