IPDH6N03LA G Infineon Technologies

MOSFET Power N-CH 25V 50A

IPDH6N03LA G

Manufacturer Part Number

IPDH6N03LA G

Description

MOSFET Power N-CH 25V 50A

Manufacturer

Infineon Technologies

Specifications of IPDH6N03LA G

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

10 m Ohms

Forward Transconductance Gfs (max / Min)

69 S / 35 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

50 A

Power Dissipation

71 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-252

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

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