BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 10

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLA0912-250
Product data sheet
Document ID
BLA0912-250 v.3
Modifications:
BLA0912-250_2
BLA0912-250_N_1
Revision history
Table 11.
Acronym
DC
DME
JTIDS
LDMOS
LDMOST
Mode-S
RF
SMD
TACAN
TCAS
VSWR
Release date
20101126
20040722
20031024
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•
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 10 on page
Table 10 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
Distance Measuring Equipment
Joint Tactical Information Distribution System
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Mode Select
Radio Frequency
Surface Mounted Device
TACtical Air Navigation
Traffic Collision Avoidance System
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Rev. 3 — 26 November 2010
6: The remark of component C8 has been removed.
6: The value of component C8 has been specified in more detail.
Change notice
-
-
-
Avionics LDMOS transistor
BLA0912-250
Supersedes
BLA0912-250_2
BLA0912-250_N_1
9397 750 12224
© NXP B.V. 2010. All rights reserved.
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