BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 7
![MOSFET Power LDMOS TNS](/photos/41/53/415337/sot502a_3d_sml.gif)
BLA0912-250
Manufacturer Part Number
BLA0912-250
Description
MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLA0912-250.pdf
(13 pages)
Specifications of BLA0912-250
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
SOT-502
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
Details
Other names
BLA0912-250,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLA0912-250
Manufacturer:
ST
Quantity:
12 400
Company:
Part Number:
BLA0912-250
Manufacturer:
NXP
Quantity:
1 000
Part Number:
BLA0912-250
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLA0912-250R
Manufacturer:
NXP
Quantity:
5 000
Company:
Part Number:
BLA0912-250R,112
Manufacturer:
NXP
Quantity:
1 400
NXP Semiconductors
8. Test information
BLA0912-250
Product data sheet
Fig 4.
(dB)
G
p
15
13
11
9
7
5
940
T
t
Power gain and drain efficiency as function of
frequency; typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
990
8.1 RF performance
1040
DS
η
G
= 36 V; I
Typical RF performance measured in common source class-AB test circuit at P
and 960 MHz to 1215 MHz frequency band. T
otherwise specified.
D
p
1090
Dq
= 150 mA; class-AB;
1140
f (MHz)
1190
All information provided in this document is subject to legal disclaimers.
001aab078
Rev. 3 — 26 November 2010
1240
55
45
35
25
15
5
(%)
η
D
Fig 5.
(dB)
G
p
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
18
16
14
12
10
8
6
4
2
0
T
t
Power gain as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
h
(2)
= 25 °C; Z
DS
100
(5)
(1)
= 36 V; I
th(j-h)
Avionics LDMOS transistor
BLA0912-250
Dq
= 0.15 K/W; unless
(4) (3)
= 150 mA; class-AB;
200
© NXP B.V. 2010. All rights reserved.
P
L
001aab079
(W)
300
L
= 250 W
7 of 13