BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 7

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
8. Test information
BLA0912-250
Product data sheet
Fig 4.
(dB)
G
p
15
13
11
9
7
5
940
T
t
Power gain and drain efficiency as function of
frequency; typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
990
8.1 RF performance
1040
DS
η
G
= 36 V; I
Typical RF performance measured in common source class-AB test circuit at P
and 960 MHz to 1215 MHz frequency band. T
otherwise specified.
D
p
1090
Dq
= 150 mA; class-AB;
1140
f (MHz)
1190
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001aab078
Rev. 3 — 26 November 2010
1240
55
45
35
25
15
5
(%)
η
D
Fig 5.
(dB)
G
p
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
18
16
14
12
10
8
6
4
2
0
T
t
Power gain as a function of load power;
typical values
p
h
= 100 μs; δ = 10 %.
= 25 °C; V
h
(2)
= 25 °C; Z
DS
100
(5)
(1)
= 36 V; I
th(j-h)
Avionics LDMOS transistor
BLA0912-250
Dq
= 0.15 K/W; unless
(4) (3)
= 150 mA; class-AB;
200
© NXP B.V. 2010. All rights reserved.
P
L
001aab079
(W)
300
L
= 250 W
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