BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 6

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
BLA0912-250
Product data sheet
Table 10.
See
[1]
[2]
Component Description
C1, C3, C9
C2, C6, C10
C4
C5
C7
C8
R1
R2
Fig 3.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
Figure
C1
Dimensions in mm.
See
Component layout for class-AB application circuit
3.
List of components
C6
C2
Table 10
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 22 pF
tantalum SMD capacitor
multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 47 pF
tantalum SMD capacitor
SMD resistor
resistor
R1
All information provided in this document is subject to legal disclaimers.
C3
for list of components.
40
Rev. 3 — 26 November 2010
C4
C5
R2
Value
47 μF; 20 V
22 μF; 63 V
51 Ω
49.9 Ω
[1]
[2]
[2]
[2]
C8
Avionics LDMOS transistor
40
BLA0912-250
Remarks
KEMET: T491D476M020AS
0805
C9
C10
© NXP B.V. 2010. All rights reserved.
C7
001aab083
60
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