BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 4

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
7. Application information
BLA0912-250
Product data sheet
7.1 Impedance information
7.2 Application circuit
Table 8.
Typical values per section unless otherwise specified.
f
MHz
960
1030
1090
1140
1215
Fig 1.
Fig 2.
L1
C1
Definition of transistor impedance
See
Layout of class-AB application circuit
Typical impedance
L2
Table 9
All information provided in this document is subject to legal disclaimers.
for details of striplines.
L3
Rev. 3 — 26 November 2010
C2
L4
Z
Ω
0.89 − j1.70
1.37 − j1.23
2.09 − j1.27
2.40 − j1.97
1.51 − j2.61
S
gate
C3
Z
S
001aaf059
Z
drain
L
C4
Z
Ω
1.53 − j1.13
1.47 − j0.99
1.38 − j0.85
1.30 − j0.71
1.17 − j0.47
Avionics LDMOS transistor
BLA0912-250
L
L5 L6
© NXP B.V. 2010. All rights reserved.
C5
001aab085
L7
4 of 13
L8