BLA0912-250 NXP Semiconductors, BLA0912-250 Datasheet - Page 2

• Manufacturer Part Number: BLA0912-250
• Description: MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLA0912-250

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA0912-250,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLA0912-250
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
[1]
Pin
1
2
3
Type number
BLA0912-250
Symbol
V
V
P
T
T
Symbol
Z
stg
j
th(j-h)
DS
GS
tot
Connected to flange.
Thermal resistance is determined under RF operating conditions; t
Parameter
drain-source voltage
gate-source voltage
total power dissipation
storage temperature
junction temperature
Parameter
transient thermal impedance from junction to
heatsink
Pinning
Ordering information
Limiting values
Thermal characteristics
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 3 — 26 November 2010
Description
flanged LDMOST ceramic package;
2 mounting holes; 2 leads
Conditions
T
h
≤ 25 °C; t
[1]
p
= 50 μs; δ = 2 %
Simplified outline
p
1
2
= 100 μs, δ = 10 %.
Conditions
T
Avionics LDMOS transistor
h
BLA0912-250
= 25 °C
3
Graphic symbol
Min
-
-
-
−65
-
© NXP B.V. 2010. All rights reserved.
[1]
Version
SOT502A
2
Max
75
±22
700
+150
200
sym039
Typ
0.18
1
3
Unit
V
V
W
°C
°C
Unit
K/W
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