IPI65R380C6 Infineon Technologies, IPI65R380C6 Datasheet - Page 10

• Manufacturer Part Number: IPI65R380C6
• Description: MOSFET Power 650V CoolMOS C6 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPI65R380C6

• Packages: PG-TO262-3
• Vds (max): 650.0 V
• Package: I2PAK (TO-262)
• Rds(on) @ Tj=25°c Vgs=10: 380.0 mOhm
• Id(max) @ Tc=25°c: 10.6 A
• Idpuls (max): 29.0 A
• Lead Free Status / Rohs Status: Details
• Other names: IPI65R380C6XK

Final Data Sheet
Table 14
Table 15
Typ. output characteristics
I
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
T
C
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
650V CoolMOS™ C6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=4.9 A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.1, 2011-02-17
GS
IPx65R380C6