BSO200P03S H Infineon Technologies, BSO200P03S H Datasheet

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BSO200P03S H

Manufacturer Part Number
BSO200P03S H
Description
MOSFET Power P-KANAL
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSO200P03S H

Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
20.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / Rohs Status
 Details
Other names
BSO200P03SHXT
Rev. 1.3
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD rating
Soldering temperature
IEC climatic category; DIN IEC 68-1
OptiMOS™-P Power-Transistor
Type
BSO200P03S H
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
Marking
200P3S
T
T
T
I
T
D
page 1
A
A
A
A
=-9.1 A, R
=25 °C
=70 °C
=25 °C
=25 °C
Lead free
1)
1)
2)
1)
Yes
GS
Product Summary
V
R
I
D
=25 Ω
DS
DS(on),max
Halogen free
Yes
≤10 secs
2.36
-9.1
-7.3
-55 ... 150
55/150/56
Value
-36.4
260
±25
98
PG-DSO-8
steady state
BSO200P03S H
packing
dry
1.56
-7.4
-5.9
20
-9.1
-30
Unit
A
mJ
V
W
°C
°C
V
mΩ
A
2010-02-15

Related parts for BSO200P03S H

BSO200P03S H Summary of contents

Page 1

... Yes Symbol Conditions =25 ° =70 ° =25 °C D,pulse A =25 Ω =-9 =25 °C tot stg page 1 BSO200P03S H - mΩ -9.1 A PG-DSO-8 packing dry Value Unit ≤10 secs steady state -9.1 -7.4 A -7.3 -5.9 -36 ±25 V 2.36 1.56 W -55 ... 150 °C 260 °C 55/150/56 2010-02-15 ...

Page 2

... =-250µA (BR)DSS GS(th) I =-100 µ =- DSS T =25 ° =- =125 ° =- GSS =- =-9.1 A DS(on |>2 DS(on)max =-7 (one layer, 70 µm thick) copper area for drain page 2 BSO200P03S H Values Unit min. typ. max K 110 - - 150 , - - - -1.5 - -0.1 -1 µA - -10 -100 - - -100 nA - 16.7 20 2010-02-15 ...

Page 3

... MHz DS C rss t d(on Ω d(off g( plateau oss =25 ° S,pulse =-9 =25 ° = =-9 /dt =100 A/µ page 3 BSO200P03S H Values min. typ. max. - 1750 2330 - 470 625 - 390 580 - -4.8 -6.4 - -2.6 -3.5 - -14 - -16 -24 - -40 - - -36.5 - -0.88 -1 Unit 2010-02-15 ...

Page 4

... Rev. 1.3 2 Drain current I =f 120 160 [° Max. transient thermal impedance Z =f(t thJS p parameter µs 1 µs 100 µ 100 [V] DS page 4 BSO200P03S H |≥ ≤ 120 T [° 100 0.5 0 0.1 0.05 0. 0.01 -1 single pulse 0.1 -2 0.01 0.00001 0.0001 0.001 0.01 0 ...

Page 5

... parameter - Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.3 6 Typ. drain-source on resistance R =f(I DS(on) parameter -2 Typ. forward transconductance g =f °150 C ° [V] GS page 5 BSO200P03S =25 ° -3.2 V -3.5 V -2.7 V -4 [A] D =25 ° [ 2010-02-15 ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 100 10 Ciss Coss 1 0 [V] DS page 6 BSO200P03S H =-100 µ max. typ. min. - 100 140 T [° 150 °C, typ 25 °C, typ 150 °C, 98% 0 [V] SD 180 25 °C, 98% 1.5 2010-02-15 ...

Page 7

... Drain-source breakdown voltage =-250 µ BR(DSS -60 - Rev. 1.3 14 Typ. gate charge V =f(Q GS parameter °C 9 100 °C 8 125 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO200P03S =-9.1 A pulsed gate [nC] gate ate 2010-02-15 ...

Page 8

... Package Outline P-DSO-8: Outline Rev. 1.3 page 8 BSO200P03S H 2010-02-15 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 BSO200P03S H 2010-02-15 ...

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