IKW40N120T2XK Infineon Technologies, IKW40N120T2XK Datasheet
IKW40N120T2XK
Specifications of IKW40N120T2XK
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IKW40N120T2XK Summary of contents
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Low Loss DuoPack : IGBT in 2 with soft, fast recovery anti-parallel EmCon diode Best in class TO247 Short circuit withstand time – Designed for : - Frequency Converters - Uninterrupted Power Supply ® nd TrenchStop 2 generation ...
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Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation ...
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Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case 1) Short circuit collector current Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off ...
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Switching Characteristic, Inductive Load Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse ...
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T =80°C C 120A 100A 80A T =110°C C 60A I c 40A I c 20A 0A 10Hz 100Hz 1kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (T 175 ...
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V =17V GE 15V 100A 13V 11V 75A 9V 7V 50A 25A COLLECTOR EMITTER VOLTAGE CE Figure 5. Typical output characteristic (T = 25°C) j 140A 120A 100A 80A 60A ...
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I , COLLECTOR CURRENT C Figure 9. Typical switching times as a function of collector current (inductive load, T =175° =0/15V, R =12Ω, ...
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E and E include losses on ts due to diode recovery 20.0mJ 15.0mJ 10.0mJ 5.0mJ 0.0mJ 20A 40A I , COLLECTOR CURRENT C Figure 13. Typical switching energy losses as a function of collector current (inductive load, T =175°C, ...
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Q , GATE CHARGE GE Figure 17. Typical gate charge (I = 15µs 10µs 5µs 0µs 12V 14V 16V GATE EMITTER VOLTAGE GE Figure 19. Short circuit ...
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V CE 600V 400V 200V 0.8us 0.4us 0us t, TIME Figure 21. Typical turn on behavior (V =0/15V, R =12Ω Dynamic test circuit in Figure E) D=0 K/W 0.2 0 ...
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DIODE CURRENT SLOPE F Figure 23. Typical reverse recovery time as a function of diode current slope (V =600V, I =40A Dynamic test circuit in Figure ...
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T = 25°C J 125A 175°C 100A 75A 50A 25A FORWARD VOLTAGE F Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors ® nd TrenchStop 2 Generation Series ...
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MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 19.80 4.17 3.50 5.49 6.04 Power Semiconductors ® nd TrenchStop 2 Generation Series PG-TO247 MAX MIN MAX 5.16 0.193 0.203 2.53 ...
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Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® nd TrenchStop 2 Generation Series i Figure C. Definition of diodes switching characteristics (t) j ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...