BTS50060-1TEA Infineon Technologies, BTS50060-1TEA Datasheet - Page 13

• Manufacturer Part Number: BTS50060-1TEA
• Description: IC PWR SW HI-SIDE 1CH TO252-5
• Manufacturer: Infineon Technologies
• Series: -r
• Type: High Sider

Specifications of BTS50060-1TEA

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 10 mOhm
• Current - Output / Channel: 16.5A
• Current - Peak Output: 75A
• Voltage - Supply: 6 V ~ 19 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

voltage clamp mechanism implemented that keeps the negative output voltage at a certain level (-
Figure 11
Nevertheless, the energy capability of the device is limited because the energy is converted into heat. That’s why
the maximum allowed load inductance is limited as well. Please see
inductance.
For calculating the demagnization energy,
The equation can be simplified under the assumption of R
The BTS50060-1TEA provides Infineon
single and parallel operation, the clamp voltage
I
5.1.3
A capacitive load’s dominant characteristic is it’s inrush current. The BTS50060-1TEA can support inrush currents
up to
description of the short circuit protection mechanism, please refer to
5.1.4
In case of a negative load current, e.g. caused by a load operating as a generator, the device can not block the
current flowing through the intrinsic body diode. See
ON or stays ON as long as
is detected. In case of fault condition, the logic of the device will switch OFF the power stage and supply a fault
signal
itself from overload condition. In the application, overload conditions, e.g. over temperature, must not occur during
inverse load current operation.
Datasheet
High current PROFET
V
L
.
SD(CL)
Figure 36
I
I
L(SC)
IS(fault)
). Please refer to
. If the inrush current reaches
. Since the device can not block negative load currents (even under fault conditions), it can not protect
Switching an inductance
Switching a Capacitive Load
Inverse Load Current Operation
shows the dependency from
TM
E
A
Figure 1
=
V
V
IN
OUT
V
V
= HIGH, reaching the same
I
S
SD CL
L
(
and
)
E
×
A
Figure 11
----- -
R
L
®
=
L
SMART CLAMPING functionality. To optimize the energy capability for
×
T
Equation (1)
1
-- -
2
I
j
L(SC)
×
for the typical
V
--------------------------------
L I
S
V
ON
, the device may detect a short circuit and switch OFF. For a
–
×
SD(CL)
for details.
V
R
L
SD CL
L
2
Figure
×
(
increases over the junction temperature
13
--------------------------------
V
may be used:
)
SD CL
L
V
R
×
V
= 0 Ω to:
DS(ON)
SD CL
(
ln
SD(CL)
12. The power stage of the device can be switched


(
)
1
–
+
)
V
as for positive load currents, if no fault condition
. Please refer also to
V
----------------------------------
V
S
OFF
SD(CL)
SD CL
Chapter
R
Figure 4
(
L
×
)
I
–
L
V
S
5.3.1.
t
t


for limitations of energy and load
+
I
L
SwitchingInductance .emf
Figure
Functional Description
Rev. 1.1, 2011-04-13
BTS50060-1TEA
T
14.
j
and load current
V
OUT
=
V
(1)
(2)
S
-