FDP5N60NZ Fairchild Semiconductor, FDP5N60NZ Datasheet - Page 5
![MOSFET Power 600V N-Channel MOSFET, UniFET-II](/photos/16/7/160788/to-220_sml.jpg)
FDP5N60NZ
Manufacturer Part Number
FDP5N60NZ
Description
MOSFET Power 600V N-Channel MOSFET, UniFET-II
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDP5N60NZ.pdf
(9 pages)
Specifications of FDP5N60NZ
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.65 Ohms
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
4.5 A
Power Dissipation
100 W
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
20 ns
Gate Charge Qg
10 nC
Rise Time
20 ns
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP5N60NZ
Manufacturer:
Fairchi/ON
Quantity:
17 382
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP5N60NZ / FDPF5N60NZ Rev. A
5