IPI65R190CFD Infineon Technologies
![MOSFET Power CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET](/photos/40/31/403125/inhouse_spi20n60c3_t_sml.jpg)
IPI65R190CFD
Manufacturer Part Number
IPI65R190CFD
Description
MOSFET Power CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
Manufacturer
Infineon Technologies
Specifications of IPI65R190CFD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
17.5 A
Power Dissipation
151 W
Mounting Style
Through Hole
Package / Case
I2PAK
Fall Time
6.4 ns
Gate Charge Qg
68 nC
Rise Time
8.4 ns
Lead Free Status / Rohs Status
Details
Other names
IPI65R190CFDXK
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPI65R190CFD
Manufacturer:
INFINEON
Quantity:
12 500